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ABB 5SNA1200E250100

  • 5SNA1200E250100
  • 5SNA1200E250100 Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, HIPAK-9; 5SNA1200E250100

    · Categories: IGBT
    · Manufacturer: ABB
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 165
    MOQ: 1 PC
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    Content last revised on May 2, 2023

    Manufacturer Part Number: 5SNA1200E250100Part Life Cycle Code: Not RecommendedIhs Manufacturer: ABB SWITZERLAND LTD SEMICONDUCTORSPackage Description: HIPAK-9Pin Count: 9Manufacturer: ABB SemiconductorsRisk Rank: 5.71Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 2500 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1325 nsTurn-on Time-Nom (ton): 615 ns Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, HIPAK-9