#Vishay Semiconductor Diodes Division, #80RIA80, #IGBT_Module, #IGBT, 80RIA80 Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, HERMETI
Manufacturer Part Number: 80RIA80Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-94Package Description: HERMETIC SEALED, TO-94, 3 PINPin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.19Circuit Commutated Turn-off Time-Nom: 350000000 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 120 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 150 mAJEDEC-95 Code: TO-209ACJESD-30 Code: O-MUPM-H3Leakage Current-Max: 15 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 1700 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 80000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: POST/STUD MOUNTPeak Reflow Temperature (Cel): 225Qualification Status: Not QualifiedRMS On-state Current-Max: 125 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTime Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, HERMETIC SEALED, TO-94, 3 PIN