#Advanced Linear Devices Inc, #ALD1117PAL, #IGBT_Module, #IGBT, ALD1117PAL Small Signal Field-Effect Transistor, 10.6V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, RO
Manufacturer Part Number: ALD1117PALPbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: ADVANCED LINEAR DEVICES INCPackage Description: IN-LINE, R-PDIP-T8ECCN Code: EAR99Manufacturer: Advanced Linear Devices IncRisk Rank: 5.6Configuration: COMMON SUBSTRATE, 2 ELEMENTSDS Breakdown Voltage-Min: 10.6 VDrain-source On Resistance-Max: 1800 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDIP-T8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: P-CHANNELSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 10.6V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, PAL, DIP-8