#Alpha & Omega Semiconductor Inc, #AOI508, #IGBT_Module, #IGBT, AOI508 Power Field-Effect Transistor, 70A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: AOI508Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ALPHA & OMEGA SEMICONDUCTOR LTDPackage Description: IPAK-3ECCN Code: EAR99Manufacturer: Alpha & Omega SemiconductorRisk Rank: 5.83Avalanche Energy Rating (Eas): 68 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 70 ADrain-source On Resistance-Max: 0.003 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-251AJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 159 ASurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 70A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A, IPAK-3