#Alpha & Omega Semiconductor Inc, #AOU4N60, #IGBT_Module, #IGBT, AOU4N60 Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor F
Manufacturer Part Number: AOU4N60Part Life Cycle Code: Not RecommendedIhs Manufacturer: ALPHA & OMEGA SEMICONDUCTOR LTDPart Package Code: TO-251Package Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: Alpha & Omega SemiconductorRisk Rank: 7.75Avalanche Energy Rating (Eas): 235 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 2.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-251JESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 14 ASurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN PACKAGE-3