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APT APT150GN120J

  • APT150GN120J

APT150GN120J Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT150GN120J

· Categories: IGBT
· Manufacturer: APT
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 102
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Content last revised on June 16, 2023

Manufacturer Part Number: APT150GN120JPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.41Additional Feature: LOW CONDUCTION LOSS, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 215 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-PUFM-X4JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 625 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4