#APT, #APT200GN60JDQ4, #IGBT_Module, #IGBT, APT200GN60JDQ4 Insulated Gate Bipolar Transistor, 283A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 PIN; APT200GN60JDQ4
Manufacturer Part Number: APT200GN60JDQ4Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.38Case Connection: ISOLATEDCollector Current-Max (IC): 283 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4JESD-609 Code: e1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 682 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 283A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 PIN