#APT, #APT20M19JVR, #IGBT_Module, #IGBT, APT20M19JVR Power Field-Effect Transistor, 112A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: APT20M19JVRPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: ISOTOP-4Pin Count: 4Manufacturer Package Code: ISOTOPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.22Additional Feature: FAST SWITCHING, UL RECOGNIZEDAvalanche Energy Rating (Eas): 1300 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (Abs) (ID): 112 ADrain Current-Max (ID): 112 ADrain-source On Resistance-Max: 0.019 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WPulsed Drain Current-Max (IDM): 448 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 112A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4