#Microsemi, #APT25GR120BSCD10, #IGBT_Module, #IGBT, APT25GR120BSCD10 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,; APT25GR120BSCD10
Manufacturer Part Number: APT25GR120BSCD10
Rohs Code: Yes
Manufacturer: MICROSEMI CORP
Package Description: ,
Manufacturer: Microsemi Corporation
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1200 V
Gate-Emitter Thr Voltage-Max: 6.5 V
Gate-Emitter Voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 521 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,