APT APT32M80J

  • APT32M80J

APT32M80J Power Field-Effect Transistor, 33A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT32M80J

· Categories: IGBT
· Manufacturer: APT
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 291
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Content last revised on April 30, 2023

Manufacturer Part Number: APT32M80JPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 5.33Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZEDAvalanche Energy Rating (Eas): 1979 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 800 VDrain Current-Max (ID): 33 ADrain-source On Resistance-Max: 0.19 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 173 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 33A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4