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APT APT39F60J

  • APT39F60J
  • APT39F60J Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4; APT39F60J

    · Categories: IGBT
    · Manufacturer: APT
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 500
    MOQ: 1 PC
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    Content last revised on December 3, 2023

    Manufacturer Part Number: APT39F60JPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 2.33Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNISEDAvalanche Energy Rating (Eas): 1580 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 42 ADrain-source On Resistance-Max: 0.11 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 210 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4