#APT, #APT40GF120JRDQ2, #IGBT_Module, #IGBT, APT40GF120JRDQ2 Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT40GF120JRDQ2
Manufacturer Part Number: APT40GF120JRDQ2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: ISOTOP-4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 5.13Additional Feature: UL RECOGNIZED, HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 347 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4