#APT, #APT75GN120J, #IGBT_Module, #IGBT, APT75GN120J Insulated Gate Bipolar Transistor, 124A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT75GN120J
Manufacturer Part Number: APT75GN120JPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: ISOTOP-4Pin Count: 4Manufacturer Package Code: ISOTOPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.61Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 124 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-XUFM-X4JESD-609 Code: e1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 379 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 124A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4