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APT APT8030JN

  • APT8030JN
  • APT8030JN Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT8030JN

    · Categories: IGBT
    · Manufacturer: APT
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 337
    MOQ: 1 PC
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    Content last revised on May 31, 2023

    Manufacturer Part Number: APT8030JNRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ADVANCED POWER TECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Advanced Power TechnologyRisk Rank: 5.64Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 800 VDrain Current-Max (Abs) (ID): 27 ADrain Current-Max (ID): 27 ADrain-source On Resistance-Max: 0.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 360 pFJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 520 WPower Dissipation-Max (Abs): 520 WPulsed Drain Current-Max (IDM): 108 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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