#APT, #APT97H50J, #IGBT_Module, #IGBT, APT97H50J Power Field-Effect Transistor, 97A I(D), 500V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: APT97H50JPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 5.84Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 3350 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 97 ADrain-source On Resistance-Max: 0.041 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 490 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 97A I(D), 500V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4