#APT, #APTGF125X60TE3G, #IGBT_Module, #IGBT, APTGF125X60TE3G Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-35; APTGF125X60TE3G
Manufacturer Part Number: APTGF125X60TE3GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X35Pin Count: 35Manufacturer: Microsemi CorporationRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 180 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X35JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 35Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-35