#Microsemi Power, #APTGF300A120D3G, #IGBT_Module, #IGBT, APTGF300A120D3G Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 7 PIN; APTGF300A120D3G
Manufacturer Part Number: APTGF300A120D3G Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: MICROSEMI CORP Package Description: ROHS COMPLIANT, D3, 7 PIN Pin Count: 7 ECCN Code: EAR99 Manufacturer: Microsemi Corporation Risk Rank: 5.63 Collector Current-Max (IC): 420 A Collector-Emitter Voltage-Max: 1200 V Gate-Emitter Voltage-Max: 20 V JESD-30 Code: R-XUFM-X7 Number of Elements: 1 Number of Terminals: 7 Operating Temperature-Max: 150 °C Package Body Material: UNSPECIFIED Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Peak Reflow Temperature (Cel): NOT SPECIFIED Power Dissipation-Max (Abs): 2100 W Qualification Status: Not Qualified Subcategory: Insulated Gate BIP Transistors Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Time Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 7 PIN