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Microsemi Power Products Group APTGF30H60T1G IGBT Module

APTGF30H60T1G

#Microsemi Power Products Group, #APTGF30H60T1G, #IGBT_Module, #IGBT, APTGF30H60T1G Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF3

· Categories: IGBT Module
· Manufacturer: Microsemi Power Products Group
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 540
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APTGF30H60T1G Specification

Sell APTGF30H60T1G, #Microsemi Power Products Group #APTGF30H60T1G Stock, APTGF30H60T1G Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF30H60T1G, #IGBT_Module, #IGBT, #APTGF30H60T1G
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/aptgf30h60t1g.html

Manufacturer Part Number: APTGF30H60T1GPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X12Pin Count: 12ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.65Case Connection: ISOLATEDCollector Current-Max (IC): 42 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 140 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN

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