Microsemi APTGF350A60G

  • APTGF350A60G

APTGF350A60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7; APTGF350A60G

· Categories: IGBT
· Manufacturer: Microsemi
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 802
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Content last revised on July 14, 2023

Manufacturer Part Number: APTGF350A60G

Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X7
Pin Count: 7
ECCN Code: EAR99
Manufacturer: Microsemi Corporation
Case Connection: ISOLATED
Collector Current-Max (IC): 430 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
JESD-609 Code: e1
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1560 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7