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Microsemi APTGF350A60G

  • APTGF350A60G
  • APTGF350A60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7; APTGF350A60G

    · Categories: IGBT
    · Manufacturer: Microsemi
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 802
    MOQ: 1 PC
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    Content last revised on July 14, 2023

    Manufacturer Part Number: APTGF350A60G

    Part Package Code: MODULE
    Package Description: FLANGE MOUNT, R-XUFM-X7
    Pin Count: 7
    ECCN Code: EAR99
    Manufacturer: Microsemi Corporation
    Case Connection: ISOLATED
    Collector Current-Max (IC): 430 A
    Collector-Emitter Voltage-Max: 600 V
    Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
    Gate-Emitter Voltage-Max: 20 V
    JESD-30 Code: R-XUFM-X7
    JESD-609 Code: e1
    Moisture Sensitivity Level: 1
    Number of Elements: 2
    Number of Terminals: 7
    Operating Temperature-Max: 150 °C
    Package Body Material: UNSPECIFIED
    Package Shape: RECTANGULAR
    Package Style: FLANGE MOUNT
    Peak Reflow Temperature (Cel): NOT SPECIFIED
    Polarity/Channel Type: N-CHANNEL
    Power Dissipation-Max (Abs): 1560 W
    Subcategory: Insulated Gate BIP Transistors
    Surface Mount: NO
    Terminal Finish: TIN SILVER COPPER
    Terminal Form: UNSPECIFIED
    Terminal Position: UPPER
    Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7