#Microsemi, #APTGF350SK60G, #IGBT_Module, #IGBT, APTGF350SK60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-5; APT
Manufacturer Part Number: APTGF350SK60G
Pbfree Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MICROSEMI CORP
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X5
Pin Count: 5
ECCN Code: EAR99
Manufacturer: Microsemi Corporation
Risk Rank: 5.71
Case Connection: ISOLATED
Collector Current-Max (IC): 430 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
JESD-609 Code: e1
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1560 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-5