BSM200GA12DA11S Infineon 1200V 200A Six-Pack IGBT Module

Find the BSM200GA12DA11S IGBT Module by Infineon. This 1200V, 200A six-pack features an NTC for thermal control in industrial drives. 90-day warranty. Contact our sales team.

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$ 46 In-Stock Offer
· Date Code: Please Verify on Quote
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Content last revised on February 5, 2026

BSM200GA12DA11S: Engineering Product Analysis

Optimized for Thermal Performance and System Reliability

The Infineon BSM200GA12DA11S is a 1200V / 200A six-pack IGBT module designed for high-reliability power conversion systems. It integrates six IGBTs and six freewheeling diodes into a compact Econo 2 package, featuring a nominal collector current of 200A and a low collector-emitter saturation voltage (VCE(sat)) of 1.90V at 125°C. A key benefit is its low thermal resistance from junction to case (Rth(j-c)) of 0.16 K/W, which enhances heat dissipation. The module also includes an integrated NTC thermistor, simplifying over-temperature protection. For engineers designing motor drives up to 75kW, the BSM200GA12DA11S's thermal efficiency directly enables more compact and reliable designs. What is the primary benefit of its integrated NTC? It allows for direct temperature monitoring, simplifying protective circuits and improving system safety.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Design

The technical specifications of the BSM200GA12DA11S are architected for robust performance in demanding industrial applications. The parameters below highlight its suitability for systems where thermal management and electrical ruggedness are critical design considerations. Understanding these values is key to leveraging the module's full capabilities in your power stage design.

Characteristic Symbol Condition Value
IGBT Inverter Characteristics
Collector-Emitter Voltage V_CES T_vj = 25°C 1200 V
Continuous Collector Current I_C,nom - 200 A
Collector-Emitter Saturation Voltage V_CE sat I_C = 200 A, T_vj = 125°C 1.90 V (typ.)
Short Circuit Withstand Time t_sc V_GE ≤ 15 V, T_vj = 150°C ≤ 10 µs
Diode Inverter Characteristics
Forward Voltage V_F I_F = 200 A, T_vj = 125°C 1.85 V (typ.)
Thermal and Mechanical Characteristics
Thermal Resistance, Junction to Case R_thJC per IGBT 0.16 K/W
Thermal Resistance, Junction to Case R_thJC per Diode 0.33 K/W
Isolation Test Voltage V_ISOL RMS, f=50Hz, t=1min 2500 V

Application Scenarios & Value

Achieving System-Level Benefits in Industrial Power Conversion

The BSM200GA12DA11S is optimized for three-phase inverter applications where efficiency and long-term reliability are paramount. Its robust 1200V blocking voltage provides the necessary safety margin for industrial systems operating on 400V to 480V AC lines, making it a cornerstone for modern Variable Frequency Drives (VFDs), servo drives, and uninterruptible power supplies (UPS). For an engineer designing a 75kW VFD, the challenge often lies in managing heat within a constrained enclosure. The module's low thermal resistance of 0.16 K/W is a critical parameter here; it acts like a wide pipeline for heat, allowing it to move efficiently from the IGBT chip to the heatsink. This superior thermal transfer can lead to a lower operating junction temperature, or alternatively, allow for a smaller, lower-cost Thermal Management solution. The integrated NTC thermistor further enhances value by simplifying the feedback loop for over-temperature protection, directly contributing to a more robust and fault-tolerant system. While this module is well-suited for the 200A class, for applications demanding higher power output, the related BSM300GA120DN2 provides increased current handling capacity in a similar voltage class.

Technical Deep Dive

A Closer Look at the Thermal Design and its Engineering Implications

The performance of a power module is often dictated by its thermal characteristics, and the BSM200GA12DA11S exemplifies a design focused on this principle. The specified Thermal Resistance (R_thJC) of 0.16 K/W is not just a number; it represents the efficiency of the thermal pathway from the active silicon to the system's cooling apparatus. To put this into perspective, consider the IGBT chip as a small, powerful engine generating heat. The thermal resistance is like the exhaust pipe; a lower Rth value is analogous to a wider, less restrictive pipe, allowing heat to escape with minimal backpressure (temperature rise). This efficiency is fundamental to reliability, as every 10°C reduction in operating junction temperature can significantly extend the module's operational lifespan. Furthermore, the inclusion of an NTC thermistor directly on the module's baseplate provides a crucial advantage over external sensing methods. It offers a more accurate reflection of the actual thermal stress on the IGBTs and diodes, minimizing the delay and potential inaccuracies of sensors placed elsewhere on the heatsink. This enables the control system to react faster and more precisely to overload conditions, preventing catastrophic failures—a key consideration explored in guides on mastering IGBT thermal management.

Frequently Asked Questions (FAQ)

What is the primary advantage of the 1.90V VCE(sat) in a motor drive application?

A lower VCE(sat) directly translates to lower conduction losses during operation. In a PWM-controlled motor drive, this means less heat is generated within the module for a given current, improving overall system efficiency and reducing the load on the cooling system.

How does the integrated NTC thermistor in the BSM200GA12DA11S simplify design?

It eliminates the need to specify, procure, and mount a separate temperature sensor on the heatsink. This reduces component count, simplifies the wiring of the control board, and provides a more accurate temperature reading closer to the heat source, leading to more reliable over-temperature protection.

For what AC line voltage is a 1200V IGBT module like this typically recommended?

A 1200V IGBT is the industry standard for three-phase inverters connected to 380V to 480V AC lines. This rating provides sufficient voltage margin to safely withstand DC bus voltage overshoots caused by regenerative braking or line transients, as detailed in many IGBT datasheet guides.

For engineering teams looking to optimize the thermal performance and reliability of their next power conversion project, the BSM200GA12DA11S offers a robust and efficient foundation. To evaluate this module for your design, please contact our technical sales team for further information and quoting.

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