Infineon BSM200GA12DA11S IGBT Module

Manufacturer: Infineon Product Category: IGBT Modules RoHS:  Details Part No: BSM200GA12DA11S Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 300 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 1400 W Package / Case: 62 mm Minimum Operating Temperature: - 40°C Maximum Operating Temperature: + 150°C Packaging: Tray Height: 36.5 mm Length: 106.4 mm Technology: Si Width: 61.4 mm Brand: Infineon Technologies Mounting Style: Chassis Mount Maximum Gate Emitter Voltage: 20 V Product Type: IGBT Modules IGBT Power Module 1200V/200A/1400W