#Infineon, #FS100R12KT4G, #IGBT_Module, #IGBT, FS100R12KT4G Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35
Manufacturer Part Number: FS100R12KT4G
Pbfree Code: Yes
Part Life Cycle Code: Active
Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X35
Pin Count: 35
ECCN Code: EAR99
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X35
Moisture Sensitivity Level: 1
Number of Elements: 6
Number of Terminals: 35
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 515 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35