Microsemi Power Products Group APTGF660U60D4G IGBT Module

Manufacturer Part Number: APTGF660U60D4GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 825 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X4JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2800 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 825A I(C), 600V V(BR)CES, N-Channel, MODUL-4