#Microsemi Power Products Group, #APTGL120TDU120TPG, #IGBT_Module, #IGBT, APTGL120TDU120TPG Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-23; AP
Manufacturer Part Number: APTGL120TDU120TPGRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X23Pin Count: 23ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 140 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 3 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X23Number of Elements: 6Number of Terminals: 23Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 517 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 430 nsTurn-on Time-Nom (ton): 185 nsVCEsat-Max: 2.15 V Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-23