#Microsemi Power Products Group, #APTGL325DA120D3G, #IGBT_Module, #IGBT, APTGL325DA120D3G Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN; APTGL325DA120
Manufacturer Part Number: APTGL325DA120D3GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: ROHS COMPLIANT, D3, 11 PINPin Count: 11ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.84Collector Current-Max (IC): 420 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X11Number of Elements: 1Number of Terminals: 11Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPower Dissipation-Max (Abs): 1500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN