#APT, #APTGS25X120RTP2G, #IGBT_Module, #IGBT, APTGS25X120RTP2G Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; APTGS25X120RTP2G
Manufacturer Part Number: APTGS25X120RTP2GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: MODULE-24Pin Count: 24Manufacturer: Microsemi CorporationRisk Rank: 5.08Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X24JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-24