#Microsemi Power Products Group, #APTGT100A120D1G, #IGBT_Module, #IGBT, APTGT100A120D1G Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, D1, 7 PIN; APTG
Manufacturer Part Number: APTGT100A120D1GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.63Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 520 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, D1, 7 PIN