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Microsemi Power Products Group APTGT100H60T3G

  • APTGT100H60T3G
  • APTGT100H60T3G Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-25; APTGT100H60T3G

    · Categories: IGBT
    · Manufacturer: Microsemi Power Products Group
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1764
    MOQ: 1 PC
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    Content last revised on September 22, 2023

    Manufacturer Part Number: APTGT100H60T3GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.36Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25JESD-609 Code: e1Number of Elements: 4Number of Terminals: 25Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 340 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-25