APT APTGT35X120RTP3G

  • APTGT35X120RTP3G

APTGT35X120RTP3G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT35X120RTP3G

· Categories: IGBT
· Manufacturer: APT
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 228
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Content last revised on June 28, 2023

Manufacturer Part Number: APTGT35X120RTP3GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X35Pin Count: 35Manufacturer: Microsemi CorporationRisk Rank: 5.06Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X35JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 7Number of Terminals: 35Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35