#Microsemi Power Products Group, #APTGT50X60T3G, #IGBT_Module, #IGBT, APTGT50X60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT5
Manufacturer Part Number: APTGT50X60T3GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.7Case Connection: ISOLATEDCollector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 25Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 176 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN