#APT, #APTGT75A120D1G, #IGBT_Module, #IGBT, APTGT75A120D1G Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT75A120D1G
Manufacturer Part Number: APTGT75A120D1GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Microsemi CorporationRisk Rank: 5.11Case Connection: ISOLATEDCollector Current-Max (IC): 110 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-7