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Microsemi Power Products Group APTGV50H60BG

  • APTGV50H60BG

APTGV50H60BG Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-21; APTGV50H60BG

· Categories: IGBT
· Manufacturer: Microsemi Power Products Group
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1883
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Content last revised on September 8, 2023

Manufacturer Part Number: APTGV50H60BGPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 21ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-21