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Microsemi Power Products Group ARF444

  • ARF444

ARF444 Power Field-Effect Transistor, 6.5A I(D), 900V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD; ARF444

· Categories: IGBT
· Manufacturer: Microsemi Power Products Group
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1327
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Content last revised on July 3, 2023

Manufacturer Part Number: ARF444Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: ADVANCED POWER TECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer: Advanced Power TechnologyRisk Rank: 5.91Case Connection: SOURCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 900 VDrain Current-Max (Abs) (ID): 6.5 ADrain Current-Max (ID): 6.5 AFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 208 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 6.5A I(D), 900V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD