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Microsemi Power Products Group ARF473

  • ARF473

ARF473 RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET; ARF473

· Categories: IGBT
· Manufacturer: Microsemi Power Products Group
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 713
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Content last revised on May 31, 2023

Manufacturer Part Number: ARF473Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-CDFM-F4ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.72Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 10 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F4JESD-609 Code: e0Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET