#Avago Technologies US Inc., #ATF_331M4_TR2, #IGBT_Module, #IGBT, ATF-331M4-TR2 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
Manufacturer Part Number: ATF-331M4-TR2Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, R-MDSO-N4ECCN Code: EAR99HTS Code: 8541.21.00.40Manufacturer: Broadcom LimitedRisk Rank: 5.42Additional Feature: LOW NOISEConfiguration: SINGLEDS Breakdown Voltage-Min: 5.5 VFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: X BANDJESD-30 Code: R-MDSO-N4JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: DEPLETION MODEOperating Temperature-Max: 160 °CPackage Body Material: METALPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 0.4 WPower Gain-Min (Gp): 13.5 dBQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: GOLDTerminal Form: NO LEADTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4