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Avago Technologies US Inc. ATF-501P8-BLK New IGBT Module

#Avago Technologies US Inc., #ATF_501P8_BLK, #IGBT_Module, #IGBT, ATF-501P8-BLK RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET

· Categories: IGBT Module
· Manufacturer: Avago Technologies US Inc.
· Price: US$
· Date Code:
. Available Qty: 318
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ATF-501P8-BLK Specification

Sell ATF-501P8-BLK, #Avago Technologies US Inc. #ATF-501P8-BLK New Stock, ATF-501P8-BLK RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8; ATF-501P8-BLK, #IGBT_Module, #IGBT, #ATF_501P8_BLK
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/atf-501p8-blk.html

Manufacturer Part Number: ATF-501P8-BLKRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, S-PDSO-N8ECCN Code: EAR99HTS Code: 8542.39.00.01Manufacturer: Broadcom LimitedRisk Rank: 7.44Additional Feature: LOW NOISECase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 7 VDrain Current-Max (Abs) (ID): 1 ADrain Current-Max (ID): 1 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: L BANDJEDEC-95 Code: MO-229JESD-30 Code: S-PDSO-N8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 3.5 WPower Gain-Min (Gp): 13.5 dBQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8

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