Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

Avago Technologies US Inc. ATF-511P8-BLK

  • ATF-511P8-BLK
  • ATF-511P8-BLK RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8; ATF-511P8-BLK

    · Categories: IGBT
    · Manufacturer: Avago Technologies US Inc.
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 1683
    MOQ: 1 PC
    Express Shipping
    90-Day Warranty
    1-2 Days Lead Time
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on November 21, 2023

    Manufacturer Part Number: ATF-511P8-BLKRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, R-PDSO-N8ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Broadcom LimitedRisk Rank: 7.59Additional Feature: LOW NOISECase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 7 VDrain Current-Max (Abs) (ID): 1 ADrain Current-Max (ID): 1 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: C BANDJESD-30 Code: R-PDSO-N8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 3 WQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8

    v1.2.0