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Avago Technologies US Inc. ATF-511P8-BLK

  • ATF-511P8-BLK

ATF-511P8-BLK RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8; ATF-511P8-BLK

· Categories: IGBT
· Manufacturer: Avago Technologies US Inc.
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1683
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Content last revised on November 21, 2023

Manufacturer Part Number: ATF-511P8-BLKRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, R-PDSO-N8ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Broadcom LimitedRisk Rank: 7.59Additional Feature: LOW NOISECase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 7 VDrain Current-Max (Abs) (ID): 1 ADrain Current-Max (ID): 1 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: C BANDJESD-30 Code: R-PDSO-N8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 3 WQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8