#Infineon Technologies, #BCX5410E6327, #IGBT_Module, #IGBT, BCX5410E6327 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon; BCX5410E6327
Manufacturer Part Number: BCX54-10E6327Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.34Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 45 VConfiguration: SINGLEDC Current Gain-Min (hFE): 63JESD-30 Code: R-PSSO-F3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 1 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: FLATTerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 100 MHz Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon