#Bourns Inc., #BD649_S, #IGBT_Module, #IGBT, BD649-S Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS
Manufacturer Part Number: BD649-SRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: BOURNS INCPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Bourns IncRisk Rank: 5.76Case Connection: COLLECTORCollector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTONDC Current Gain-Min (hFE): 750JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-220, 3 PIN