#NXP Semiconductors, #BLF10M6200U, #IGBT_Module, #IGBT, BLF10M6200U RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semi
Manufacturer Part Number: BLF10M6200URohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLANGE MOUNT, R-CDFM-F2ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.7Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2