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NXP Semiconductors BLF10M6LS200U

  • BLF10M6LS200U
  • BLF10M6LS200U RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF10M6LS200U

    · Categories: IGBT
    · Manufacturer: NXP Semiconductors
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1750
    90-Day Warranty
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    Content last revised on September 4, 2023

    Manufacturer Part Number: BLF10M6LS200URohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-CDFP-F2ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.69Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFP-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2