#NXP, #BLF6G10LS_135R, #IGBT_Module, #IGBT, BLF6G10LS-135R RF MOSFET Transistors LDMOS TNS ; BLF6G10LS-135R
Product Category: RF MOSFET Transistors BLF6G10LS-135R Manufacturer: NXP RoHS: RoHS Compliant YES Transistor Polarity: N-Channel Id - Continuous Drain Current: 32 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 100 mOhms Technology: Si Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT502B Packaging: Tube Brand: NXP Semiconductors Channel Mode: Enhancement Configuration: Single Height: 4.72 mm Length: 20.7 mm Minimum Operating Temperature: - 65 C Factory Pack Quantity: 20 Type: RF Power MOSFET Vgs - Gate-Source Voltage: 13 V Width: 9.91 mm Part # Aliases: BLF6G10LS-135R,112 RF MOSFET Transistors LDMOS TNS