NXP Semiconductors BLF8G20LS-220J

  • BLF8G20LS-220J

BLF8G20LS-220J RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF8G20LS-220J

· Categories: IGBT
· Manufacturer: NXP Semiconductors
· Price: US$
· Date Code: Please Verify on Quote
. Available Qty: 1139
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869
Tags:

Content last revised on July 3, 2023

Manufacturer Part Number: BLF8G20LS-220JRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-CDFP-F2ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.58Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-CDFP-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2