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NXP Semiconductors BLF8G27LS-100GVJ

  • BLF8G27LS-100GVJ

BLF8G27LS-100GVJ RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6; BLF8G27LS-100GVJ

· Categories: IGBT
· Manufacturer: NXP Semiconductors
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1213
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Content last revised on June 26, 2023

Manufacturer Part Number: BLF8G27LS-100GVJRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: SMALL OUTLINE, R-CDSO-G6ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.23Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJESD-30 Code: R-CDSO-G6Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6