#NXP Semiconductors, #BLF8G27LS_100PU, #IGBT_Module, #IGBT, BLF8G27LS-100PU RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconducto
Manufacturer Part Number: BLF8G27LS-100PURohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-CDFP-F4ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.63Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJESD-30 Code: R-CDFP-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Gain-Min (Gp): 16.8 dBReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4