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NXP Semiconductors BLP8G10S-45PGY

  • BLP8G10S-45PGY
  • BLP8G10S-45PGY RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOP-4; BLP8G10S-45PGY

    · Categories: IGBT
    · Manufacturer: NXP Semiconductors
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1043
    MOQ: 1 PC
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    Content last revised on May 2, 2023

    Manufacturer Part Number: BLP8G10S-45PGYRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.34Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-G4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOP-4