#NXP Semiconductors, #BLP8G10S_45PY, #IGBT_Module, #IGBT, BLP8G10S-45PY RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Se
Manufacturer Part Number: BLP8G10S-45PYRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-PDFP-F4ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.31Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDFP-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOPF, 4 PIN