NXP Semiconductors BLP8G10S-45PY

  • BLP8G10S-45PY

BLP8G10S-45PY RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOPF, 4 PIN; BLP8G10S-45PY

· Categories: IGBT
· Manufacturer: NXP Semiconductors
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1073
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Content last revised on August 2, 2023

Manufacturer Part Number: BLP8G10S-45PYRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-PDFP-F4ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.31Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDFP-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOPF, 4 PIN