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BLS7G2730L-200PU,
# NXP Semiconductors #BLS7G2730L-200PU New Stock, BLS7G2730L-200PU RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4; BLS7G2730L-200PU, #IGBT_Module, #IGBT, #BLS7G2730L_200PU
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/bls7g2730l-200pu.html
Manufacturer Part Number: BLS7G2730L-200PU
Rohs Code: Yes
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: AMPLEON NETHERLANDS B V
Package Description: FLANGE MOUNT, R-CDFM-F4
ECCN Code: EAR99
Manufacturer: Ampleon
Risk Rank: 5.74
Case Connection: SOURCE
Configuration: COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min: 65 V
FET Technology: METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band: S BAND
JESD-30 Code: R-CDFM-F4
Number of Elements: 2
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Gain-Min (Gp): 9.8 dB
Reference Standard: IEC-60134
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Time
RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
