#Infineon Technologies, #BSC014N04LS, #IGBT_Module, #IGBT, BSC014N04LS Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicond
Manufacturer Part Number: BSC014N04LSPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-F3Pin Count: 8ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Infineon Technologies AGRisk Rank: 2.18Additional Feature: ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLEAvalanche Energy Rating (Eas): 170 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (ID): 32 ADrain-source On Resistance-Max: 0.0019 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 400 ASurface Mount: YESTerminal Finish: TINTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN