#EUPEC, #BSM200GAL120DLC, #IGBT_Module, #IGBT, BSM200GAL120DLC Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; BSM200GAL120DLC
Manufacturer Part Number: BSM200GAL120DLCHOSA1Part Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-XUFM-X5Manufacturer: Infineon Technologies AGRisk Rank: 5.64Case Connection: ISOLATEDCollector Current-Max (IC): 420 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 650 nsTurn-on Time-Nom (ton): 190 ns Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-5